The third quarter of this year will see the arrival of Samsung’s Galaxy S23 FE, and it has been revealed that it will feature different chipsets to previous models.
The global variant is expected to carry the 4nm Exynos 2200 with 8GB RAM, the same as the Galaxy S22 Ultra, and has been criticised for being less efficient than the Qualcomm peer due to the 4nm manufacturing process.
The US variant will carry the Snapdragon 8 Gen 1 chipset, and paired with 8GB RAM.
Qualcomm is constantly perceived as a better choice, so Samsung recently unveiled a Snapdragon 888-powered Galaxy S21 FE in India.
The S23 FE is also expected to feature 6.4 inch 120Hz AMOLED display, 4,500mAh battery with 25W charging, and a 50MP main camera.
